View 2SD1376_4142804.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

savantic semiconductor product specification silicon npn power transistors 2SD1376 d escription with to-126 package darlington complement to type 2sb1012 applications for low frequency power amplifier applications pinning(see fig.2) pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 120 v v ebo emitter-base voltage open collector 7 v i c collector current 1.5 a i cm collector current-peak 3.0 a p c collector power dissipation t c =25 20 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SD1376 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma; r be = = 120 v v (br)ebo emitter-base breakdown voltage i e =50ma ;i c =0 7 v v cesat-1 collector-emitter saturation voltage i c =1.0a ;i b =1ma 1.5 v v cesat-2 collector-emitter saturation voltage i c =1.5a ;i b =1.5ma 2.0 v v besat-1 base-emitter saturation voltage i c =1.0a ;i b =1ma 2.0 v v besat-2 base-emitter saturation voltage i c =1.5a ;i b =1.5ma 2.5 v i ceo collector cut-off current v ce =100v; r be = = 10 a i cbo collector cut-off current v cb =120v; i e =0 100 a h fe dc current gain i c =1a ; v ce =3v 2000 30000 v d diode forward voltage i d =1.5a 3.0 v t on turn-on time 0.5 s t off turn-off time i c =1a ;i b1 =-i b2 =1ma 2.0 s
savantic semiconductor product specification 3 silicon npn power transistors 2SD1376 package outline fig.2 outline dimensions

▲Up To Search▲

Price & Availability of 2SD1376

	To Download 2SD1376 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .